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AssigneeThe Hong Kong Polytechnic University Shenzhen Reseach Institute
InventorsMingjie LI, Qi Liu
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The embodiments relate to the technical field of optoelectronic devices and to a circular polarization-resolved photonic artificial synapse (CPL-resolved PAS) device and a preparation method therefor. The CPL-resolved PAS device includes a heterostructure based on a helical chiral perovskite (H-PVK) and a single-wall carbon nanotube (SWNT). The heterostructure includes a H-PVK layer and a SWNT layer. The H-PVK layer and the SWNT layer contact and overlap, and a heterojunction is formed between the H-PVK layer and the SWNT layer. Using the chiral optoelectronic response characteristics of the H-PVK and the carrier conduction characteristics of the SWNT, the heterostructure is able to achieve nano-ampere-level distinguishable photocurrent response for circular-polarization UV light with different chirality. The CPL-resolved PAS device obtained by the present disclosure has good stability and can be prepared on a large scale.
A heterostructure based on a helical chiral perovskite (H-PVK) and a single-wall carbon nanotube (SWNT), wherein the heterostructure comprises a H-PVK layer and a SWNT layer, and the H-PVK layer and the SWNT layer contact and overlap, and a heterojunction is formed between the H-PVK layer and the SWNT layer.
A photonic artificial synapse (PAS) device, comprising:
A method for preparing a photonic artificial synapse (PAS) device, comprising the following steps:
Dependencies are inferred from the claim text.