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US 2025/0155808 A1Published application
Resist composition and method of forming resist pattern
AssigneeZeon Corporation
InventorMakoto FUJIMURA
Life of this patent
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Abstract
Provided is a resist composition in which a cross-linker that reacts in response to ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less is compounded.
Claims9
A resist composition comprising:
- a cross-linker that reacts in response to ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less;
- a solvent;
- and
- a polymer.
1 more element
A method of forming a resist pattern comprising:
- performing resist film formation by applying a resist composition containing a cross-linker that reacts in response to ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less, a solvent, and a polymer onto a substrate to obtain a coating layer, and removing the solvent from the coating layer to form a resist film;
- and
- performing exposure by exposing the resist film formed in the resist film formation using ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less as exposure light and causing a cross-linking reaction to proceed through the cross-linker while forming a latent pattern.
Dependencies are inferred from the claim text.