Photonic device and method
AssigneeSTMicroelectronics International N.V.
InventorsSébastien Cremer, Frédéric Boeuf
Life of this patent
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Abstract
A method of manufacturing a photonic device comprises, successively, forming on a first substrate at least one metallization level and a first bonding layer, forming on a second high-resistivity substrate a second bonding layer, bonding the first bonding layer to the second bonding layer, removing the first substrate; and forming a first optical component on the at least one metallization level. A sum of the thicknesses of the first and second bonding layers and of the thickness of the at least one metallization level is greater than 3 μm.
Claims23
A method of manufacturing a photonic device, the method comprising, successively:
- forming on a first substrate at least one metallization level, and a first bonding layer;
- forming on a second high-resistivity substrate a second bonding layer;
- bonding the first bonding layer to the second bonding layer;
- removing the first substrate;
- and
- forming a first optical component on a first surface of the at least one metallization level opposite to a second surface of the at least one metallization level in contact with the first bonding layer, a sum of thicknesses of the first bonding layer, the second bonding layer, and the at least one metallization level being greater than 3 μm.
A photonic device comprising:
- a first optical component disposed on a stack;
- and
- the stack, successively comprising:
- a first surface of at least one metallization level;
- a first bonding layer;
- a second bonding layer;
- and
- a second high-resistivity substrate;
- wherein a sum of thicknesses of the first bonding layer, the second bonding layer, and the at least one metallization level is greater than 3 μm.
Dependencies are inferred from the claim text.