Measurement method for estimating temperature of power semiconductor module

A measurement method for estimating temperatures of a power semiconductor module comprising a single Metal-Oxide-Semiconductor, a single Metal-insulator-Semiconductor or a set of Metal-Oxide-Semiconductors or Metal-insulator-Semiconductor paralleled connected, said method comprising:

• at least one first series of operations, during which the module is in a reference state, including
• a. injecting a positive current Ig,ref from the emitter/source to the gate of said module, an initial voltage V0,ref of the module, gate-emitter/source, being superior to a flatband voltage Vfb,
• b. measuring the voltage Vig,ref(t) across the current source,
• c. stop the current injection Ig,ref when the voltage of the module becomes inferior to the flatband voltage Vfb,
• at least one second series of operations, during which the module is in a operational state, including
• d. injecting a positive current Ig,op from the emitter/source to the gate of said module, an initial voltage V0,op of the module, gate-emitter/source, being superior to a flatband voltage Vfb,
• e. measuring the voltage Vig,op(t) across the current source,
• f. stop the current injection Ig,op when the voltage of the module becomes inferior to the flatband voltage Vfb,
• then,
• at least one third series of operations including
• g. comparing the voltages Vig,ref(t) and Vig,op(t) measured respectively during one said first series and one said second series,
• h. deducing, from the comparison, a temperature dispersion Tj,dev across the module.