Film forming method and film forming apparatus

A film forming apparatus, comprising:

• a processing container configured to accommodate a substrate;
• a substrate placement stage configured to place the substrate inside the processing container;
• a counter electrode provided to face the substrate placement stage;
• a gas supply configured to supply a process gas into the processing container;
• an exhauster configured to exhaust and depressurize an inside of the processing container;
• a radio frequency power supply configured to supply radio frequency power for plasma generation to the substrate placement stage;
• a direct current power supply configured to apply a negative voltage to the counter electrode;
• and
• a controller,
• wherein the controller is configured to control the gas supply, the exhauster, the radio frequency power supply, and the direct current power supply so as to execute:
• controlling the exhauster such that the inside of the processing container is depressurized to a desired pressure in a state in which the substrate is placed on the substrate placement stage;
• forming a carbon film on the substrate by generating plasma through application of the radio frequency power for plasma generation to the substrate placement stage while supplying the process gas including a carbon-containing gas into the depressurized processing container;
• and
• performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.