Area selective deposition of metals for electronic devices

A method for area selective deposition, the method comprising:

• providing a substrate containing a metal surface that is exposed and a non-metal surface that is exposed;
• flowing a deposition gas containing a ruthenium (Ru) carbonyl precursor to the substrate, the ruthenium carbonyl precursor decomposing on the metal surface such that a Ru metal film is deposited on the metal surface and carbon monoxide (CO) gas is released;
• stopping the flow of the deposition gas to the substrate;
• flowing an inhibitor gas to the substrate after stopping the flow of the deposition gas to the substrate;
• and
• repeatedly cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate, wherein the cycling selectively forms the Ru metal film on the metal surface relative to the dielectric surface, and wherein the flowing the inhibitor gas increases the selectivity of the Ru metal film formed on the metal surface when compared to the selectivity of the Ru metal film formed on the metal surface without flowing the inhibitor gas.

A method for area selective deposition, the method comprising:

• providing a substrate containing a metal surface that is exposed and a non-metal surface that is exposed, where the metal surface has a plurality of different grain orientations;
• flowing a deposition gas containing a metal carbonyl precursor to the substrate, the metal carbonyl precursor decomposing on the metal surface such that a metal film is deposited on the metal surface and carbon monoxide (CO) gas is released;
• stopping the flow of the deposition gas to the substrate;
• flowing an inhibitor gas to the substrate after stopping the flow of the deposition gas to the substrate;
• and
• repeatedly cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate, wherein the cycling selectively forms the metal film on the metal surface relative to the dielectric surface, and wherein the flowing the inhibitor gas increases the thickness uniformity of the metal film formed on the plurality of different grain orientations when compared to the selectivity of the metal film formed on the plurality of different orientations without flowing the inhibitor gas.