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US 2025/0149486 A1Published application
Semiconductor package and method of forming the same
OwnerYao-Jen Chang, Chung-Yu Lu +3inventors
InventorsYao-Jen Chang, Chung-Yu Lu, Ping-Kang Huang, Sao-Ling Chiu, Hsien-Pin Hu
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Abstract
A method includes forming a first conductive pillar on an interposer; forming a second conductive pillar on the interposer, wherein the second conductive pillar includes a barrier layer; bonding a first semiconductor device to the first conductive pillar by a first bonding region that includes more inter-metallic compound than solder; and bonding the first semiconductor device to the second conductive pillar by a second bonding region that includes more solder than inter-metallic compound.
Claims20
A method comprising:
- forming a first conductive pillar on an interposer;
- forming a second conductive pillar on the interposer, wherein the second conductive pillar comprises a barrier layer;
- bonding a first semiconductor device to the first conductive pillar by a first bonding region comprising more inter-metallic compound than solder;
- and
- bonding the first semiconductor device to the second conductive pillar by a second bonding region comprising more solder than inter-metallic compound.
2 more elements
A method comprising:
- performing a first deposition process to form a plurality of first metal pillars over a substrate;
- performing a second deposition process to form a plurality of second metal pillars over the substrate;
- performing a third deposition process to form a barrier layer on the plurality of second metal pillars;
- depositing solder material on the plurality of first metal pillars and on the plurality of second metal pillars;
- and
- bonding a plurality of dies to the plurality of first metal pillars and to the plurality of second metal pillars, comprising:
- placing the plurality of dies on the solder material;
- and
- performing a reflow process, wherein after performing the reflow process the solder material on the plurality of first metal pillars comprises more inter-metallic compound than the solder material on the plurality of second metal pillars.
6 more elements
A package comprising:
- an interposer;
- and
- a semiconductor device attached to the interposer by a first connection and a second connection, wherein the first connection comprises a fully inter-metallic compound region sandwiched between first conductive features, wherein the second connection comprises a solder region sandwiched between second conductive features, wherein the second conductive features comprise a barrier layer.
Dependencies are inferred from the claim text.