Semiconductor structure with bonding interface and methods of forming the same

A semiconductor device comprising:

• a first integrated circuit die comprising:
• a first interconnect structure over a device layer, the first interconnect structure comprising a first contact pad;
• a first passivation layer over the first interconnect structure;
• a second passivation layer over the first passivation layer;
• and
• a first redistribution line extending from an upper surface of the second passivation layer to the first contact pad;
• and
• a second integrated circuit die attached to the first integrated circuit die, a conductive feature of the second integrated circuit die being direct bonded to the first redistribution line, a dielectric layer of the second integrated circuit die being direct bonded to the second passivation layer.

A semiconductor device comprising:

• a first integrated circuit comprising a first device layer and a first interconnect structure;
• a second integrated circuit electrically connected to the first integrated circuit, the second integrated circuit comprising a second device layer and a second interconnect structure;
• and
• a bonding region interposed between the first interconnect structure and the second interconnect structure, the bonding region comprising:
• a first passivation layer adjacent to the first interconnect structure;
• first redistribution lines embedded in the first passivation layer;
• a second passivation layer adjacent to the second interconnect structure, the second passivation layer being bonded to the first passivation layer;
• and
• second redistribution lines embedded in the second passivation layer, the second redistribution lines being bonded to the first redistribution lines.