Selective Dielectric Capping for Hybrid Bonding
AssigneesApplied Materials, Inc., Nanyang Technological University
InventorsPrayudi LIANTO, Chuan Seng TAN
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Abstract
A method for increasing dielectric bonding strength during wafer-level processing is incorporated into a hybrid bonding process. A method may include immersing a substrate into a chemical bath at atmospheric conditions where the chemical bath forms a self-assembled monolayer on metal surfaces of the substrate and selectively depositing a high-k dielectric material to form a dielectric cap on dielectric surfaces of the substrate absent of the self-assembled monolayer.
Claims20
A method for increasing dielectric bonding strength during wafer-level processing, comprising:
- immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate;
- and
- selectively depositing a dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer.
A method for increasing dielectric bonding strength during wafer-level processing, comprising:
- immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate and wherein immersing the substrate into the chemical bath occurs at atmospheric pressure and ambient temperature;
- and
- selectively depositing a high-k dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer, wherein a thickness of the high-k dielectric material is greater than zero nm to approximately 10 nm.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for increasing dielectric bonding strength during wafer-level processing to be performed, the method comprising:
- immersing a substrate into a chemical bath, wherein the chemical bath forms a self-assembled monolayer on at least one metal surface of the substrate and wherein immersing the substrate into the chemical bath occurs at atmospheric pressure and ambient temperature;
- and
- selectively depositing a dielectric material to form a dielectric cap on at least one dielectric surface of the substrate absent of the self-assembled monolayer.
Dependencies are inferred from the claim text.