Thinned semiconductor package and related methods

A semiconductor device comprising:

• a wafer comprising a first side and a second side, the wafer further comprising a plurality of die;
• a plurality of bumps coupled to the first side of the wafer;
• a backside metal layer coupled to the second side of the wafer, wherein the backside metal layer is patterned;
• a mold compound separating die of the plurality of die and at least partially encapsulating the plurality of bumps, wherein the mold compound extends to the second side of the wafer;
• and
• a plurality of steps formed between the backside metal layer and the wafer.

A semiconductor device comprising:

• a wafer comprising a first side and a second side, the wafer further comprising a plurality of die;
• a plurality of bumps coupled to the first side of the wafer;
• a backside metal layer coupled to the second side of the wafer, wherein the backside metal layer covers an entirety of a backside of the plurality of die;
• a mold compound separating die of the plurality of die and at least partially encapsulating the plurality of bumps, wherein the mold compound extends to the second side of the wafer.