Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a transistor disposed over a substrate;
• and
• a plurality of wiring layers disposed over the transistor, wherein:
• one of the plurality of wiring layers includes a wiring pattern extending in a first direction and a via contact connected to a bottom surface of the wiring pattern,
• the via contact comprises a lower portion and an upper portion, and
• a width W11 of the upper portion in a second direction crossing the first direction is smaller than a width W12 of the lower portion in the second direction.

A semiconductor device comprising:

• a transistor disposed over a substrate;
• and
• a plurality of wiring layers disposed over the transistor, wherein:
• the plurality of wiring layers includes an n-th wiring layer and an (n+1)-th wiring layer, the n-th wiring layer includes a first wiring pattern extending in a first direction and a first via contact connected to an upper surface of the first wiring pattern,
• the (n+1)-th wiring layer includes a second wiring pattern extending in a second direction crossing the first direction and connected to the first via contact at a bottom surface of the second wiring pattern,
• a width W1 of the second wiring pattern above the first via contact in the first direction and a width W2 of the first via contact in the first direction at an interface between the second wiring pattern and the first via contact satisfy 0.95≤W1/W2≤1.05, and
• the width W2 is smaller than a largest width W3 of the via contact in the second direction.