Interconnection structure

An interconnection structure, comprising:

• a semiconductor substrate that is formed with a first metal trench and a second metal trench;
• a third metal trench that is disposed over the semiconductor substrate and that extends parallel to a top surface of the semiconductor substrate;
• a fourth metal trench that is disposed over the semiconductor substrate and that extends parallel to the top surface of the semiconductor substrate;
• a first metal via that extends from the first metal trench to the third metal trench;
• and
• a second metal via that extends from the second metal trench to the fourth metal trench,
• wherein a distance between a top surface and a bottom surface of the third metal trench is different from a distance between a top surface and a bottom surface of the fourth metal trench.

An interconnection structure, comprising:

• a first interconnection layer that includes a first metal trench feature and a second metal trench feature;
• and
• a second interconnection layer that is disposed over the first interconnection layer, and that includes a first metal via feature, a second metal via feature, a third metal trench feature and a fourth metal trench feature;
• wherein the first metal via feature connects the third metal trench feature to the first metal trench feature, and the second metal via feature connects the fourth metal trench feature to the second metal trench feature;
• and
• wherein a thickness of the third metal trench feature is different from a thickness of the fourth metal trench feature.