Semiconductor device including heating structure

A semiconductor device, comprising:

• a substrate having a device region including a memory cell region and a peripheral circuit region, and a heating region surrounding the device region;
• at least one heating structure disposed in the heating region of the substrate, the at least one heating structure surrounding the device region in a plan view;
• and
• at least one temperature control device electrically connected to the at least one heating structure,
• wherein the peripheral circuit region includes a peripheral gate structure,
• the peripheral gate structure includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer,
• the at least one heating structure includes first lower structures disposed at a same level as the peripheral gate structure,
• the first lower structures each include a lower dielectric layer and a conductive layer disposed on the lower dielectric layer, the conductive layer and the gate electrode including a same material, and
• a thickness of a lower dielectric layer of at least one of the first lower structures is different from a thickness of the gate dielectric layer.

A semiconductor device, comprising:

• a substrate having a device region including a memory cell region and a peripheral circuit region, and a heating region surrounding the device region, wherein the peripheral circuit region includes a peripheral gate structure;
• a heating structure disposed in the heating region of the substrate, the heating structure surrounding the device region in a plan view and including first lower structures disposed at a same level as the peripheral gate structure;
• capping layers covering the first lower structures;
• spacers covering side surfaces of the capping layers and the first lower structures;
• first lower contacts passing through the capping layers, the first lower contacts electrically connected to the first lower structures;
• a gate capping layer covering the peripheral gate structure;
• a gate contact passing through the gate capping layer, the gate contact electrically connected to the peripheral gate structure;
• and
• a temperature control device electrically connected to the heating structure,
• wherein the first lower structures each include a lower dielectric layer, and a conductive layer including polysilicon disposed on the lower dielectric layer, and
• the first lower contacts are electrically connected to the temperature control device and electrically isolated from the gate contact.