Gallium introduction for cavity shaping engineering for cmos devices

Abstract

A method of forming an electrical contact in a semiconductor structure includes performing a contact trench forming process to form a contact trench in a dielectric layer formed over a semiconductor region, performing a dopant implanting process to implant dopants in a region of the semiconductor region in proximity to an exposed surface of the semiconductor region within the contact trench, subsequent to the dopant implanting process, performing a cavity shaping process to form a cavity in the exposed surface of the semiconductor region within the contact trench, performing a silicide forming process to form a cavity contact within the contact trench, and performing a metal filling process to form a contact plug in the contact trench.

Dependencies are inferred from the claim text.