Semiconductor Device, Method of Manufacture by Monitoring Relative Humidity, and System of Manufacture Thereof

A method of forming a semiconductor device, the method comprising:

• moving a first wafer and a second wafer into a surface treatment station;
• performing a plasma activation step on the first wafer and the second wafer, wherein the plasma activation step is performed in a relative humidity in a range of 20% to 60%;
• moving the first wafer and the second wafer to a cleaning station;
• dispensing a cleaning agent over the first wafer and the second wafer;
• moving the first wafer and the second wafer to a bonding station;
• and
• bonding the first wafer and the second wafer to each other, wherein bonding the first wafer and the second wafer is performed in a relative humidity in a range of 20% to 70%.

A method of forming a semiconductor device, the method comprising:

• moving a first wafer and a second wafer into a surface treatment station;
• performing a plasma activation step on the first wafer and the second wafer in a treatment area;
• moving the first wafer and the second wafer to a cleaning station in a bonding area;
• dispensing a cleaning agent over the first wafer and the second wafer;
• moving the first wafer and the second wafer to a bonding station;
• and
• bonding the first wafer and the second wafer to each other, wherein bonding the first wafer and the second wafer is performed in a relative humidity in a range of 20% to 70%.