Member for semiconductor manufacturing apparatus

A member for semiconductor manufacturing apparatus, comprising:

• a ceramic plate having a wafer placement surface on its upper surface and a built-in electrostatic electrode;
• a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path;
• a passage provided from a lower surface of the base plate to the wafer placement surface of the ceramic plate;
• a plurality of inner electrodes provided in multiple steps in an up-down direction inside the ceramic plate so as to be located in a periphery of the passage under the electrostatic electrode and not to be exposed to an inner wall of the passage, the plurality of inner electrodes being electrically coupled to the electrostatic electrode;
• and
• a bias electrode provided electrically independently from the electrostatic electrode at a height equal to or lower than a height of a lowermost inner electrode of the plurality of inner electrodes, the bias electrode being configured so that a bias voltage is applied when generating a plasma over the wafer placement surface.