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AssigneeTokyo Electron Limited
InventorsKandabara Tapily, Eric Chih-Fang Liu, Lior Huli
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Embodiments of methods are provided herein to form an extreme ultra-violet (EUV) photoresist pattern on a semiconductor substrate using a multilayer photoresist film stack. The disclosed embodiments begin by forming a multilayer photoresist film stack including a plurality of relatively thin photoresist film layers, each layer comprising a different photoresist material. After EUV exposure, the disclosed embodiments selectively develop the different photoresist layers in separate different development steps. In doing so, the process flows and methods disclosed herein increase the resist film thickness and improve development selectivity to avoid the photoresist damage and photoresist pattern collapse that often occurs during conventional EUV lithography processes.
A method of processing a semiconductor substrate, the method comprising:
A method of processing a semiconductor substrate, the method comprising:
Dependencies are inferred from the claim text.