Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A substrate processing apparatus comprising:

• a first fluorine-containing gas supplier configured to supply a first fluorine-containing gas;
• a reactive gas supplier configured to supply a reactive gas containing a predetermined element;
• a second fluorine-containing gas supplier configured to supply a second fluorine-containing gas;
• and
• a controller configured to be capable of controlling the first fluorine-containing gas supplier, the reactive gas supplier and the second fluorine-containing gas supplier to perform:
• (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle comprises:
• (a1) supplying the first fluorine-containing gas to the substrate;
• and
• (a2) supplying the reactive gas to the substrate;
• and
• (b) supplying the second fluorine-containing gas to the substrate after (a),
• wherein a first substance containing the predetermined element is generated in (a), and
• wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.

A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:

• (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle comprises:
• (a1) supplying a first fluorine-containing gas to the substrate;
• and
• (a2) supplying a reactive gas containing a predetermined element to the substrate;
• and
• (b) supplying a second fluorine-containing gas to the substrate after (a),
• wherein a first substance containing the predetermined element is generated in (a), and
• wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.