Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorsHiroki SATO, Yuki KAWADA, Akihiro YOKOTA
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsHiroki SATO, Yuki KAWADA, Akihiro YOKOTA
Estimating the term…
A plasma processing apparatus disclosed herein includes a chamber, a substrate support, a plasma generator, at least one electromagnet, and a power source. The substrate support is provided in the chamber. The substrate support includes a first region on which a substrate is placeable and a second region which surrounds the first region and on which an edge ring is placed. The plasma generator is configured to generate a plasma in the chamber. The at least one electromagnet is configured to generate a magnetic field localized in an annular space above the edge ring. The power source is electrically connected to the at least one electromagnet and is configured to adjust a strength of the magnetic field.
A plasma processing apparatus comprising:
A plasma processing method comprising:
Dependencies are inferred from the claim text.