Back to results
US 2025/0149302 A1Published application
Anti-plasma coating
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Kai Hu, Ren-Guan Duan, Chiun-Da Shiue, Chin-Han Meng
Life of this patent
Estimating the term…
Abstract
An anti-plasma coating formed on a surface of a component in a plasma chamber includes an insulation layer on the surface and a plasma-resistant layer on the insulation layer. The plasma-resistant layer includes one or more stacks, where each stack includes a crystalline layer and an amorphous layer. The anti-plasma coating improves a lifetime of the component in the plasma chamber with high-energy plasma sources.
Claims20
A coating, comprising:
- an insulating layer on a substrate;
- and
- an anti-plasma layer on the insulating layer, wherein the anti-plasma layer comprises:
- an amorphous layer comprising a first insulating material;
- and
- a crystalline layer, on the amorphous layer, comprising a second insulating material different from the first insulating material.
3 more elements
A method, comprising:
- depositing an oxide material on a component surface;
- and
- forming an anti-plasma layer on the oxide material, comprising:
- forming an amorphous layer comprising a first plasma-resistant material;
- and
- forming, on the amorphous layer, a crystalline layer comprising a second plasma-resistant material different from the first plasma-resistant material.
3 more elements
A component, comprising:
- a surface comprising a metallic substrate;
- an insulating layer on the metallic substrate;
- and
- a stack of layers on the insulating layer, wherein each layer in the stack of layers is plasma resistant, and wherein the stack of layers comprises:
- a first layer with a first material structure;
- and
- a second layer with a second material structure different from the first material structure.
4 more elements
Dependencies are inferred from the claim text.