Memory array programming method using bitlines and memory device for performing the same

A memory system comprising:

• a memory device;
• and
• a memory controller configured to control the memory device,
• wherein the memory device comprises:
• a memory cell array comprising a plurality of memory cells, respectively connected to a plurality of bitlines;
• a plurality of multiplexers, each comprising a plurality of transistors connected to each of a specific number of bitlines, among the plurality of bitlines;
• a reference circuit configured to generate reference current;
• a decoding circuit configured to transmit the reference current to the plurality of multiplexers;
• and
• a control logic circuit configured to apply the reference current to at least two transistors in a first multiplexer, among the plurality of multiplexers, based on a control signal transmitted from the memory controller.

A method of operating a memory device comprising:

• receiving a first input related to an operation of the memory device;
• generating a reference current;
• transmitting the reference current to a decoding circuit based on the first input;
• and
• controlling the decoding circuit to apply the reference current to at least two transistors among a plurality of transistors in a first multiplexer, the at least two transistors respectively connected to at least two bitlines among a plurality of bitlines of a memory cell array.