Memory device and method for operating the same

A memory device, comprising:

• a memory array comprising a plurality of memory cells, wherein each one of the plurality of memory cells is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive a first voltage signal through the control line and to receive a second voltage signal through at least one of the data line or the source line,
• wherein during a normal operation, the second voltage signal oscillates between a positive voltage level and a negative voltage level;
• and
• a driver circuit coupled to the plurality of memory cells and configured to provide the second voltage signal during a recover operation, wherein the driver circuit comprises:
• at least one of a header unit or a footer unit, wherein the header unit is configured to selectively couple to a first reference voltage that is higher than the positive voltage level, or the footer unit is configured to selectively couple to a second reference voltage that is lower than the negative voltage level.

A method, comprising:

• during a normal operation, each one of a plurality of memory cells receiving a first voltage signal through a control line and receiving a second voltage signal through at least one of a data line or a source line;
• providing a first reference voltage signal by a header unit or providing a second reference voltage signal by a footer unit;
• transmitting the first reference voltage signal or the second reference voltage signal as the first voltage signal to the plurality of memory cells by a transmission unit coupled in series with the at least one of the header unit or the footer unit;
• and
• during a recover operation, at least one of the plurality of memory cells receiving a third voltage signal, wherein the third voltage signal oscillates between a positive voltage level and a negative voltage level,
• wherein the positive voltage level is higher than the first reference voltage signal or the negative voltage level is lower than the second reference voltage signal.