Automated voltage demarcation (vdm) adjustment for memory device
AssigneeMicron Technology, Inc.
InventorsYi-Min Lin, Fangfang Zhu, Chih-Kuo Kao
Life of this patent
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Abstract
A memory system includes a memory device and a processing device coupled to the memory device. The processing device receives a plurality of codewords; selects a first read voltage associated with the one or more codewords, such that the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords; and applies the first read voltage to a set of memory cells storing the one or more codewords.
Claims20
A system comprising:
- a memory device;
- a processing device, operatively coupled to the memory device, the processing device configured to perform operations, comprising:
- receiving a plurality of codewords;
- selecting a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords;
- and
- applying the first read voltage to a set of memory cells storing the one or more codewords.
A method, comprising:
- receiving, by a processing device, a plurality of codewords;
- selecting a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords;
- and
- applying the first read voltage to a set of memory cells storing the one or more codewords.
A non-transitory computer-readable storage medium comprising executable instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
- receiving a plurality of codewords;
- selecting a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords;
- and
- applying the first read voltage to a set of memory cells storing the one or more codewords.
Dependencies are inferred from the claim text.