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US 2025/0147659 A1Published application
3d-stacked memory with reconfigurable compute logic
AssigneeSamsung Electronics Co., Ltd.
InventorsMu-Tien Chang, Prasun Gera, Dimin Niu, Hongzhong Zheng
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Abstract
A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
Claims20
A memory device comprising:
- a first circuit;
- and
- an interface for receiving a first command from a second device,
- wherein, the first circuit is configured to:
- receive the first command from the second device over the interface;
- convert the first command into a second command;
- and
- perform an operation on first data based on the second command.
5 more elements
A method comprising:
- receiving, by an interface, a first command from a second device;
- receiving the first command by a first circuit coupled to the interface;
- converting, by the first circuit, the first command into a second command;
- and
- performing, by the first circuit, an operation on first data based on the second command.
2 more elements
Dependencies are inferred from the claim text.