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US 2025/0147439 A1Published application
Cleaning apparatus, extreme ultraviolet lithography system, and method of cleaning extreme ultraviolet lithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Han LIN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
Life of this patent
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Abstract
A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
Claims20
An extreme ultraviolet (EUV) lithography system comprising:
- an EUV radiation source configured to generate EUV radiation;
- an exposure device connected to the EUV radiation source and configured to direct the EUV radiation during an EUV lithography process;
- and
- a cleaning apparatus comprising a laser generator configured to perform functions including at least one following:
- irradiate a component of the EUV radiation source with a first laser beam having a first wavelength higher than an absorption wavelength of a material the component of the EUV radiation source, or
- irradiate a component of the exposure device with a second laser beam having a second wavelength higher than an absorption wavelength of a material the component of the exposure device.
3 more elements
A cleaning apparatus comprising:
- a laser generator configured to irradiate an interior component of an extreme ultraviolet (EUV) lithography system with a laser beam to vaporize byproduct debris formed during a generation of EUV radiation in the EUV lithography system, wherein the laser generator is configured to generate the laser beam having a wavelength higher than an absorption wavelength of a material of the interior component of the EUV lithography system irradiated with the laser beam;
- and
- a vacuuming tool configured to remove the vaporized byproduct debris from a region proximal to the interior component of the EUV lithography system.
A method of cleaning an extreme ultraviolet (EUV) lithography system, the method comprising:
- irradiating an interior component of the EUV lithography system with a laser beam to vaporize a byproduct contamination formed on the interior component by an EUV generation process conducted in the EUV lithography system, wherein the laser beam has a wavelength higher than an absorption wavelength of a material of the interior component irradiated with the laser beam.
Dependencies are inferred from the claim text.