Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device

A method of manufacturing a semiconductor device, comprising:

• exposing a first portion of a photoresist layer to a first exposure dose of extreme ultraviolet radiation using a first portion of an extreme ultraviolet mask, wherein the photoresist layer and the extreme ultraviolet mask are separated by a first distance;
• a first lateral stepping of the photoresist layer relative to the extreme ultraviolet mask;
• tilting the photoresist layer relative to the extreme ultraviolet mask to form an image at a target focus position;
• and
• exposing the first portion of the photoresist layer to a second exposure dose of extreme ultraviolet radiation using a second portion of the extreme ultraviolet mask, and simultaneously exposing a second portion of the photoresist layer to the second exposure dose using the first portion of the extreme ultraviolet mask.

A photolithography apparatus, comprising:

• a photomask;
• a wafer stage configured to support a substrate coated with a photoresist layer;
• and
• a controller,
• wherein the controller is configured to:
• control an exposure of a first portion of the photoresist layer to a first exposure dose of radiation at a first distance separating the photoresist layer and the photomask;
• control laterally moving of the photoresist layer relative to the photomask;
• tilt the photoresist layer relative to the photomask to form an image at a target focus position;
• and
• control an exposure of the first portion of the photoresist layer to a second exposure dose of radiation using a second portion of the photomask at a second distance separating the photoresist layer and the photomask, and an exposure of a second portion of the photoresist layer to the second exposure dose at the second distance using the first portion of the photomask.