Lithography method for positive tone development
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hui WENG, Chen-Yu LIU, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.
Claims20
A lithography method, comprising:
- forming a material layer over a substrate;
- forming a resist layer over the material layer;
- exposing the resist layer;
- developing the resist layer;
- rinsing the resist layer using a basic aqueous wetting solution with a pH value greater than 7.5;
- and
- etching the material layer using the resist layer as an etch mask.
A lithography method, comprising:
- forming a material layer over a substrate;
- forming a resist layer over the material layer;
- exposing the resist layer;
- applying a first basic aqueous wetting solution with a pH value greater than 7.5 to the resist layer;
- developing the resist layer;
- and
- etching the material layer using the resist layer as an etch mask.
A lithography method, comprising:
- forming a target layer over a substrate;
- forming a hard mask over the target layer;
- forming a multilayer stack over the hard mask, wherein the multilayer stack comprises a bottom layer, a middle layer over the bottom layer and a resist layer over the middle layer;
- exposing the resist layer;
- developing the resist layer;
- rinsing the resist layer using a basic aqueous wetting solution with a pH value greater than 7.5;
- and
- etching the middle layer of the multilayer stack using the resist layer as an etch mask.
Dependencies are inferred from the claim text.