Method of manufacturing a semiconductor device and pattern formation method

A method of manufacturing a semiconductor device, comprising:

• depositing a first organometallic material layer over a substrate,
• wherein the first organometallic material layer includes an organometallic material selected from the group consisting of
• depositing a gaseous material over the first organometallic material layer;
• reacting the gaseous material with the first organometallic material layer to form a first layer of reaction product;
• depositing a second organometallic material layer of the organometallic material over the first layer of reaction product;
• depositing an additional amount of the gaseous material over the second organometallic material layer;
• reacting the additional amount of the gaseous material with the second organometallic material layer to form a second layer of reaction product;
• selectively exposing the first and second layers of reaction product to actinic radiation;
• and
• developing the selectively exposed first and second layers of reaction product to form a pattern in the resist layer.