Channel structure and semiconductor manufacturing device

Abstract

A channel structure includes a base, a channel, a plurality of openings, first metal wiring, and second metal wiring. The base has a first surface and is constituted of ceramic. The channel is located inside the base and includes a plurality of branch paths. The plurality of openings are located in the first surface and are respectively connected to the plurality of branch paths. The first metal wiring is at least partially located inside the base and is constituted of a first metal. The second metal wiring is at least partially located inside the base and is constituted of a second metal different from the first metal. The first metal wiring and the second metal wiring are connected to each other inside the base and constitute a thermocouple portion having a thermocouple function. The base includes a plurality of the thermocouple portions.

Dependencies are inferred from the claim text.