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US 2025/0146178 A1Published application
SiC EPITAXIAL WAFER
AssigneeResonac Corporation
InventorsYoshikazu UMETA, Marie Ohuchi
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Abstract
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a low triangular defect density, and high carrier concentration uniformity. According to the present invention, a SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less and a carrier concentration variation of 20% or less.
Claims5
A SiC epitaxial wafer comprising:
- a SiC substrate;
- and
- a SiC epitaxial layer,
- wherein the SiC substrate has a diameter of 195 mm or more, and
- wherein the SiC epitaxial layer has a triangular defect density of 0.2 pieces/cm2 or less and a carrier concentration variation of 20% or less.
2 more elements
Dependencies are inferred from the claim text.