Compositions and methods using same for carbon doped silicon containing films

A method for forming a carbon doped silicon oxide film via a thermal ALD process, the method comprising:

• a) placing one or more substrates, each comprising a surface that includes a surface feature, into a reactor;
• b) heating the reactor to one or more temperatures ranging from ambient temperature to about 550° C. and optionally maintaining the reactor at a pressure of 100 torr or less;
• c) introducing a composition comprising 1,1,3,3-tetrachloro-1,3-disilacyclobutane and mesitylene into the reactor to form a film on the surface;
• d) purging the reactor using an inert gas;
• e) introducing a nitrogen source into the reactor to react with the film to form a carbon doped silicon nitride film;
• f) purging the reactor using an inert gas to remove reaction by-product;
• g) repeating steps c to f to provide a desired thickness of the carbon doped silicon nitride film;
• h) treating the resulting carbon doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to about 1000° C. to convert the carbon doped silicon nitride film into a carbon doped silicon oxide film;
• and
• i) exposing the carbon doped silicon oxide film to a plasma comprising hydrogen.

A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at % to 30 at. % via a thermal ALD process, the method comprising the method comprising:

• a. placing one or more substrates comprising a surface feature into a reactor;
• b. heating the reactor to one or more temperatures ranging from ambient temperature to about 150° C. and optionally maintaining the reactor at a pressure of 100 torr or less;
• c. introducing a composition comprising 1,1,3,3-tetrachloro-1,3-disilacyclobutane, mesitylene, and a catalyst into the reactor;
• d. purging the reactor with an inert gas;
• e. providing vapors of water into the reactor to react with 1,1,3,3-tetrachloro-1,3-disilacyclobutane in the presence of the catalyst to form a carbon doped silicon oxide film;
• and
• f. purging the reactor with inert gas to remove any reaction by-products, wherein steps c to f are repeated to provide a desired thickness of the carbon doped silicon oxide film.

A method for depositing a carbon-doped silicon oxide film having carbon content ranging from 5 at. % to 20 at. % using a thermal ALD process and a plasma comprising hydrogen, the method comprising the steps of:

• a. placing one or more substrates comprising a surface into a reactor;
• b. heating to reactor to one or more temperatures ranging from ambient temperature to about 550° C. and optionally maintaining the reactor at a pressure of 100 torr or less;
• c. introducing a composition comprising 1,1,3,3-tetrachloro-1,3-disilacyclobutane and a solvent selected from the group consisting of mesitylene, 2-methyl-nonane, 1,2,4,5-tetramethylpiperazine, ethoxy-benzene, and 1-ethyl-4-methyl-benzene into the reactor to form a film on the surface;
• d. purging the reactor with an inert gas to remove any unreacted composition;
• e. introducing a nitrogen source into the reactor to react with the film to form a carbon-doped silicon nitride film;
• f. purging the reactor with inert gas to remove any reaction by-products;
• g. repeating steps b to e to provide a desired thickness of the carbon-doped silicon nitride film;
• h. treating the carbon doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000° C. to convert the carbon doped silicon nitride film into a carbon doped silicon oxide film either in situ or in another chamber;
• and
• i. exposing the carbon doped silicon oxide film to a plasma comprising hydrogen;
• and
• j. optionally treating the carbon doped silicon oxide film with either a spike anneal at temperatures from 400 to 1000° C. or a UV light source.