Semiconductor manufacturing facility and shower head coating method using the same

A shower head coating method comprising:

• a precursor application step of applying a precursor to a substrate;
• a placement step of placing the substrate coated with the precursor in a processing space in a chamber;
• a heat/pressure application step of applying heat and pressure to the substrate coated with the precursor;
• a coating layer forming step of vaporizing the precursor to form a coating layer on a shower head disposed so as to face the substrate;
• and
• a film quality improvement step of heating the shower head to apply heat to the coating layer.

A semiconductor manufacturing facility comprising:

• a carrier configured to store a substrate having a precursor applied to an upper surface thereof;
• an index block comprising a load port configured to allow the carrier storing the substrate to be seated thereon and an index frame provided with an index robot configured to withdraw the substrate from the carrier seated on the load port;
• a load lock chamber configured to temporarily store the substrate transferred from the index robot;
• a processing block comprising a substrate processing apparatus configured to perform processing on the substrate;
• and
• a substrate transferring block comprising a substrate transferring robot configured to load the substrate transferred from the load lock chamber into the substrate processing apparatus or to transfer the substrate unloaded from the substrate processing apparatus to the load lock chamber,
• wherein the substrate processing apparatus comprises:
• a chamber comprising a processing space defined therein;
• a substrate support unit disposed in the processing space, the substrate support unit being configured to support the substrate coated with the precursor transferred from the substrate transferring robot;
• a first heating member configured to heat the substrate coated with the precursor;
• a gas supply unit configured to supply gas to the processing space;
• a plasma generation unit configured to convert the supplied gas into plasma;
• a shower head configured to supply the supplied gas to the processing space;
• a driving unit configured to raise the substrate support unit or the substrate supported on the substrate support unit toward the shower head;
• and
• a controller, and
• wherein, when the substrate coated with the precursor is transferred to the substrate support unit, the controller controls the driving unit to raise the substrate coated with the precursor toward the shower head, and controls the first heating member so that the precursor applied to the substrate is vaporized and a coating layer is formed on the shower head.