Dual collimator physical vapor depositions processing chamber

A physical vapor deposition apparatus, comprising:

• a top flux optimizer configured to be biased;
• an intermediate flux optimizer configured to be biased, wherein the top flux optimizer and the intermediate flux optimizer are separated by a first distance;
• a bottom flux optimizer configured to be biased, wherein the bottom flux optimizer and the intermediate flux optimizer are separated by a second distance;
• a top power source coupled to the top flux optimizer;
• an intermediate power source coupled to the intermediate flux optimizer;
• and
• a bottom power source coupled to the bottom flux optimizer.

A method for depositing a film onto a substrate, the method comprising:

• applying a bias to at least one of a plurality of biasable flux optimizers disposed in a processing region of a processing chamber by supplying a voltage thereto, the voltage being supplied by a power source, wherein
• at least one of the plurality of biasable flux optimizers is grounded, and
• the plurality of biasable flux optimizers are positioned within the processing region between a sputtering target and a substrate support;
• and
• forming a film on a surface of a substrate disposed on the substrate support by sputtering a target material from the sputtering target by applying a bias to the target.