Method and system for fabricating a mems device

Abstract

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

Dependencies are inferred from the claim text.