Polishing pad and method of manufacturing a semiconductor device using the same
AssigneeSK enpulse Co., Ltd.
InventorsYujin SHIN, Joonho AN, Kyunghwan KIM, Jangwon SEO
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Abstract
The polishing pad according to an embodiment can reduce noise and vibration in a specific frequency range. Accordingly, the polishing pad has excellent sound absorption characteristics since the maximum sound absorption coefficient satisfies 0.1 or more as measured at a frequency of 500 Hz to 4,000 Hz according to Equation 1. Thus, since it can minimize energy loss caused by heat energy or vibration energy in a CMP polishing process, it has an excellent polishing rate.
Claims20
A polishing pad, which comprises a polishing layer, wherein the polishing layer comprises a urethane-based prepolymer, a foaming agent, and a curing agent, and the maximum sound absorption coefficient is 0.1 or more as measured at a frequency of 500 Hz to 4,000 Hz according to the following Equation 1:
- Sound
-
- absorption
-
- coefficient
- =
- (
- I
- i
- -
- I
- r
- )
- /
- I
- i
- =
- (
- I
- a
- +
- I
- t
- )
- /
- I
- i
- [
- Equation
-
- 1
- ]
- in Equation 1, when the polishing pad is cut (diameter:
- 45 mm) to measure sound pressure within an impedance tube according to KS F 2814-2, Ii is the intensity of the incident sound, Ir is the intensity of the reflected sound, Ia is the intensity of the absorbed sound, and It is the intensity of the transmitted sound.
Dependencies are inferred from the claim text.