Polishing pad with improved slurry flowability and process for preparing a semiconductor device using the same
AssigneeSK enpulse Co., Ltd.
InventorsYujin SHIN, Jongwook YOON, Joonho AN, Kyunghwan KIM, Jangwon SEO
Life of this patent
Estimating the term…
Abstract
As specially designed second grooves in a radial form are adopted in addition to first grooves in a concentric form in the polishing pad according to an embodiment, slurry flowability can be improved, and wafer profile and polishing rate can be changed. Accordingly, the polishing pad according to the embodiment can be used in the fabrication of semiconductor devices to enhance process efficiency and product quality.
Claims10
A polishing pad, which comprises a polishing layer having a polishing surface, wherein the polishing layer comprises a plurality of first grooves having a circular shape and sharing the center of the polishing surface;
- and a plurality of second grooves formed radially from a position distanced from the center by 10% to 90% of the radius of the polishing surface to the outer periphery, and
- when the silicon oxide layer of a silicon wafer is polished using a ceria slurry on the polishing surface, and when the polishing rate is measured at 30 or more random locations, the within-wafer non-uniformity (WIWNU) calculated by the following equation is 15% or less:
- W
-
- I
-
- W
-
- N
-
- U
-
- (
- %
- )
- =
- RR_stdev
- RR_avg
- ×
- 1
-
- 0
-
- 0
- wherein RR_stdev is the standard deviation of the polishing rate (Å/minute) measurements, and RR_avg is the average of the polishing rate (Å/minute) measurements.
Dependencies are inferred from the claim text.