Stacked device structure with a bulk acoustic wave resonator supported by a surface acoustic wave device

A stacked acoustic wave device structure comprising:

• a first surface acoustic wave device including a first piezoelectric layer with a first interdigital transducer electrode on the first piezoelectric layer that generate a surface acoustic wave;
• a second surface acoustic wave device above the first surface acoustic wave device, the second surface acoustic wave device including a second piezoelectric layer with a second interdigital transducer electrode on the second piezoelectric layer that generate a second surface acoustic wave;
• a first layer above the second surface acoustic wave device along which at least the second surface acoustic wave propagates;
• and
• a bulk acoustic wave resonator supported by the first layer, the bulk acoustic wave resonator including an air cavity, a third piezoelectric layer above the air cavity, and electrodes on opposing sides of the third piezoelectric layer.