Narrow line cut masking process

Abstract

A method of patterning a substrate includes providing a first relief pattern on a substrate, wherein the first relief pattern includes a first resist, coating the first relief pattern with a solubility-shifting agent, depositing a second resist on the first relief pattern such that the second resist is in contact with the first relief pattern, and diffusing the solubility-shifting agent a predetermined distance into the second resist to provide a solubility-shifted region of the second resist. The solubility-shifted region of the second resist borders the first relief pattern. Then, the method includes developing the second resist such that the solubility-shifted region is dissolved providing gaps between the first relief pattern and the second resist where a portion of the substrate is exposed and etching the substrate using the first relief pattern and the second resist as a combined etch mask.

Dependencies are inferred from the claim text.