Methods for determining suitability of czochralski growth conditions for producing substrates for epitaxy

A method for determining suitability of a silicon substrate for epitaxy, the method comprising:

• loading a silicon substrate onto a susceptor disposed within a processing reactor;
• contacting a front surface of the silicon substrate with a silicon-containing gas, the silicon-containing gas decomposing to form a first epitaxial silicon layer on the silicon substrate;
• contacting a front surface of the first epitaxial silicon layer with a silicon-containing gas, the silicon-containing gas decomposing to form a second epitaxial silicon layer on the first epitaxial silicon layer to form an epitaxial wafer;
• and
• imaging the epitaxial wafer by infrared depolarization to determine an infrared depolarization parameter.