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AssigneeTaiwan-Asia Semiconductor Corporation
InventorsYao-Song CHANG, Po-Jen HSIEH
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A ceiling plate and an epitaxial growth device having the same are provided. The epitaxial growth device includes a wafer carrying platform and a reaction chamber. The wafer carrying platform is used to carry at least one wafer, and the reaction chamber accommodates the wafer carrying platform and includes a ceiling plate and a gas supply device. The ceiling plate is disposed on the top of the reaction chamber, and the gas supply device provides a reaction gas to at least one wafer on the wafer carrying platform. The ceiling plate includes a plurality of recessed structures so that when the reaction gas flows through the recessed structures, the friction resistance with the surface of the ceiling plate is reduced.
An epitaxial growth device, comprising:
A ceiling plate applied in an epitaxial growth device, wherein the epitaxial growth device comprises a reaction chamber for providing a reaction gas and the ceiling plate is disposed on the top of the reaction chamber, the ceiling plate is characterized by:
Dependencies are inferred from the claim text.