Ferroelectric tunnel junction with multilevel switching

A method of creating a ferroelectric tunnel junction comprising:

• (i) providing a substrate;
• (ii) depositing a first electrode onto the substrate;
• (iii) pulsing a plasma comprising oxygen and ozone to oxidize a portion of the first electrode to form an interfacial layer;
• (iv) depositing a ferroelectric layer onto the first electrode at a deposition temperature, the step of depositing the ferroelectric layer comprising:
• (a) exposing the first electrode to a first precursor that does not decompose at the deposition temperature;
• (b) exposing the substrate to a first reaction gas;
• (c) exposing the substrate to a second precursor that does not decompose at the deposition temperature;
• and
• (d) exposing the substrate to a second reaction gas,
• wherein one of the first precursor and the second precursor comprises zirconium and the other of the first precursor and the second precursor comprises hafnium;
• and
• (v) depositing a second electrode onto the ferroelectric layer.