Back to results
US 2025/0098548 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorCha Deok DONG
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods for fabricating semiconductor memory devices are disclosed. In an embodiment, a semiconductor device includes: a selector pattern configured to exhibit a threshold switching behavior; an insulating layer structured to a sidewall of the selector pattern and include an opening disposed within the insulating layer over the selector pattern; and an electrode formed in the opening to a thickness that blocks an entrance of the opening and does not completely fill the opening.
Claims20
A semiconductor device comprising:
- a selector pattern configured to exhibit a threshold switching behavior by exhibiting different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage;
- an insulating layer structured to surround a sidewall of the selector pattern and include an opening disposed within the insulating layer over the selector pattern;
- and
- an electrode formed in the opening to a thickness that blocks an entrance of the opening and does not completely fill the opening.
1 more element
A method for fabricating a semiconductor device, comprising:
- forming a stacked structure that includes a selector pattern and a sacrificial electrode, wherein the selector pattern is configured to exhibit a threshold switching behavior by exhibiting different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage;
- forming an insulating layer structured to surround a sidewall of the stacked structure;
- forming an opening by removing at least part of the sacrificial electrode;
- and
- forming an electrode in the opening to a thickness that blocks an entrance of the opening and does not completely fill the opening.
2 more elements
Dependencies are inferred from the claim text.