Magnetoresistive effect element and magnetic memory
AssigneeTDK Corporation
InventorsShuji OKAME, Tomoyuki SASAKI, Zhenyao TANG
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Abstract
The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
Claims20
A magnetoresistive effect element comprising:
- a reference layer;
- a magnetization free layer;
- a tunnel barrier layer provided between the reference layer and the magnetization free layer;
- a first cap layer provided on the magnetization free layer;
- a second cap layer;
- and
- a ferromagnetic layer provided between the first cap layer and the second cap layer, the ferromagnetic layer having a thickness that is less than a thickness of the magnetization free layer.
A magnetic memory comprising a plurality of magnetoresistive effect elements,
- wherein each of the magnetoresistive effect elements comprises:
- a reference layer;
- a magnetization free layer;
- a tunnel barrier layer provided between the reference layer and the magnetization free layer;
- a first cap layer provided on the magnetization free layer;
- a second cap layer;
- and
- a ferromagnetic layer provided between the first cap layer and the second cap layer, the ferromagnetic layer having a thickness less than a thickness of the magnetization free layer.
Dependencies are inferred from the claim text.