Manufacturing apparatus and memory device

A manufacturing apparatus comprising:

• a wafer holding unit configured to hold a wafer;
• a wafer clamp unit configured to fix the wafer on the wafer holding unit and including a high melting point metal element;
• and
• an ion source configured to output an ion beam, wherein
• in a case of etching a member on the wafer, the wafer is irradiated with the ion beam, and in a case of forming a first layer including the high melting point metal element on the wafer, the wafer clamp unit is irradiated with the ion beam.

A memory device comprising:

• a memory element;
• a switching element;
• and
• an electrode between the memory element and the switching element, wherein
• the electrode includes:
• a first conductor including one of carbon (C) and carbon nitride (CN);
• and
• a second conductor including a high melting point metal element, and
• the second conductor is in direct contact with the memory element.