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AssigneeToyoda Gosei Co., Ltd.
InventorsKoichi MIZUTANI, Hideki OMOYA, Shinichi MATSUI, Hiroaki MAKINO
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The present disclosure provides a light emitting device in which the ultraviolet reflectance can be improved while the p-side electrode can form ohmic contact with the p-type layer. A flip-chip type ultraviolet light emitting device includes an n-type layer, an active layer, a p-type layer, a p-side electrode formed on the p-type layer, including a layer in contact with the p-type layer and made of Ru, Rh, or an alloy containing those metals as a main component, and having a thickness that transmits ultraviolet light with an emission wavelength, an insulating DBR layer formed on and in contact with a part of the p-side electrode, and reflecting ultraviolet light with an emission wavelength, a second p-side electrode being electrically connected with the p-side electrode through a hole formed in a region on the p-side electrode of the DBR layer.
A flip-chip type ultraviolet light emitting device comprising:
A method for manufacturing a flip-chip type ultraviolet light emitting device, the method comprising:
Dependencies are inferred from the claim text.