Display panel and preparation method thereof

A method of preparing a display panel, comprising steps of:

• forming a first pixel composite layer on a side of a first base, wherein the first pixel composite layer comprises a second semiconductor layer of a second doping type, a first light-emitting unit layer, and a first semiconductor layer of a first doping type sequentially stacked;
• forming a second pixel composite layer on a side of a second base, wherein the second pixel composite layer comprises a fifth semiconductor layer of the second doping type, a third light-emitting unit layer, a fourth semiconductor layer of the first doping type, a second light-emitting unit layer, and a third semiconductor layer of the second doping type sequentially stacked;
• bonding a side of the first pixel composite layer facing away from the first base to a side of an array substrate, and removing the first base;
• and
• bonding a side of the second pixel composite layer facing away from the second base to a side of the array substrate, and removing the second base,
• wherein the first pixel composite layer is patterned before the step of bonding the side of the first pixel composite layer facing away from the first base to the side of the array substrate, and removing the first base;
• and the second pixel composite layer is patterned before the step of bonding the side of the second pixel composite layer facing away from the second base to the side of the array substrate, and removing the second base.

A method of preparing a display panel, comprising steps of:

• forming a first pixel composite layer on a side of a first base, wherein the first pixel composite layer comprises a second semiconductor layer of a second doping type, a first light-emitting unit layer, and a first semiconductor layer of a first doping type sequentially stacked;
• forming a second pixel composite layer on a side of a second base, wherein the second pixel composite layer comprises a fifth semiconductor layer of the second doping type, a third light-emitting unit layer, a fourth semiconductor layer of the first doping type, a second light-emitting unit layer, and a third semiconductor layer of the second doping type sequentially stacked;
• bonding a side of the first pixel composite layer facing away from the first base to a side of an array substrate, and removing the first base;
• and
• bonding a side of the second pixel composite layer facing away from the second base to a side of the array substrate, and removing the second base,
• wherein the first pixel composite layer is patterned after the step of bonding the side of the first pixel composite layer facing away from the first base to the side of the array substrate, and removing the first base;
• and the second pixel composite layer is patterned after the step of bonding the side of the second pixel composite layer facing away from the second base to the side of the array substrate, and removing the second base, wherein after the first pixel composite layer is patterned, an insulating protrusion is formed in a patterned area of the first pixel composite layer, a via hole running through the insulating protrusion is formed, a distance between a surface of the insulating protrusion facing away from the array substrate and the array substrate is a third distance, a distance between a surface of the first pixel composite layer facing away from the array substrate and the array substrate is a fourth distance, the third distance is equal to the fourth distance;
• and then, the side of the second pixel composite layer facing away from the second base is bonded to the side of the array substrate, and the second base is removed.