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US 2025/0098367 A1Published application
Red light-emitting diode
AssigneeSundiode Korea
InventorsJames Chinmo KIM, Sungsoo YI
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Abstract
A red light-emitting diode utilizing electron tunneling is disclosed. Tunneling occurs between two well layers arranged around a barrier layer due to the wave-like properties of electrons. Due to the unique properties and strain of the crystal structure, the polarization in the well layer causes displacement of electrons and holes. The electrons tunnel through the barrier layer and recombine with holes in the valence band on the opposite side.
Claims18
A red light-emitting diode comprising:
- a first well layer;
- a barrier layer formed on the first well layer and having a higher bandgap than the first well layer;
- and
- a second well layer formed on the barrier layer and having a lower bandgap than the barrier layer,
- wherein the first well layer and the second well layer have a tilted band structure, and wherein electrons in the first well layer recombine with holes in the second well layer through tunneling to perform a light emission operation.
2 more elements
A red light-emitting diode comprising:
- a first well layer made of InGaN;
- a barrier layer formed on the first well layer, through which electrons of a conduction band in the first well layer can tunnel;
- and
- a second well layer made of InGaN and formed on the barrier layer, where the tunneling electrons in the first well layer recombine with holes,
- wherein the concentration of indium in the first well layer increases toward the barrier layer, and the concentration of indium in the second well layer also increase toward the barrier layer.
2 more elements
Dependencies are inferred from the claim text.