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US 2025/0098362 A1Published application
Solar cell and manufacturing method therefor
AssigneeTrina Solar Co., Ltd.
InventorsSungjin KIM, Juhwa CHEONG, Hyungwook CHOI, Wonjae CHANG
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Abstract
A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.
Claims19
A solar cell, comprising:
- a semiconductor substrate;
- a first conductivity-type region formed on a first surface of the semiconductor substrate and composed of a polycrystalline silicon layer having an n-type conductivity;
- a first passivation layer including:
- a first aluminum oxide layer positioned on the first conductivity-type region and having hydrogen, and
- a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer;
- a second conductivity-type region formed at or on a second surface of the semiconductor substrate and having a p-type conductivity;
- a second passivation layer including:
- a second aluminum oxide layer positioned on the second conductivity-type region;
- and
- a second dielectric layer positioned on the second aluminum oxide layer and including a material different from the second aluminum oxide layer, where the second aluminum oxide layer is prepared by hydrogen implantation;
- a first electrode passing through the first passivation layer and electrically connected to the first conductivity-type region;
- and
- a second electrode passing through the second passivation layer and electrically connected to the second conductivity-type region.
10 more elements
A solar cell, comprising:
- a semiconductor substrate;
- a first conductivity-type region formed on a first surface of the semiconductor substrate and composed of a polycrystalline silicon layer having a first conductivity type;
- a second conductivity-type region formed on a second surface of the semiconductor substrate and composed of a doped region having a second conductivity type;
- a first passivation layer positioned on the first conductivity-type region;
- a second passivation layer positioned on the second conductivity-type region;
- a first electrode electrically connected to the first conductivity-type region passing through the first passivation layer;
- and
- a second electrode passing through the second passivation layer and electrically connected to the second conductivity-type region,
- wherein each of the first passivation layer and the second passivation layer includes:
- an aluminum oxide layer positioned on a respective one of the first conductivity-type region and the second conductivity-type region;
- and
- a dielectric layer positioned on the aluminum oxide layer and including a material different from the aluminum oxide layer,
- wherein the aluminum oxide layer is prepared by hydrogen implantation.
10 more elements
A method for manufacturing a solar cell, comprising:
- forming a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity on a first surface of a semiconductor substrate, and forming a second conductivity-type region at or on a second surface of a semiconductor substrate;
- forming a passivation layer including:
- forming a first passivation layer on the first conductivity-type region, and
- forming a second passivation layer on the second conductivity-type region, and
- forming a first electrode passing through the first passivation layer and electrically connected to the first conductivity-type region;
- wherein the forming the first passivation layer includes:
- a process of forming a first aluminum oxide layer having hydrogen on the first conductivity-type region, and
- a process of forming a first dielectric layer positioned on the first aluminum oxide layer, and the first dielectric layer including a material different from the first aluminum oxide layer.
5 more elements
Dependencies are inferred from the claim text.