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US 2025/0098360 A1Published application
Photodiode
AssigneeRohm Co., Ltd.
InventorsToshikazu MUKAI, Yoichi MUGINO
Life of this patent
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Abstract
A photodiode comprises a substrate and a semiconductor stack. The substrate has a major surface. The semiconductor stack is disposed on the major surface. The semiconductor stack includes a buffer layer disposed on the major surface and a light absorption layer disposed on the buffer layer. The light absorption layer is formed of InxGa1-xAsyP1-y, where x and y are larger than 0 and smaller than 1. The buffer layer is formed of InzGa1-zAs, where z is larger than 0 and smaller than 1.
Claims6
A photodiode comprising:
- a substrate having a major surface;
- and
- a semiconductor stack disposed on the major surface,
- the semiconductor stack including a buffer layer disposed on the major surface and a light absorption layer disposed on the buffer layer,
- the light absorption layer being formed of InxGa1-xAsyP1-y, where x and y are larger than 0 and smaller than 1,
- the buffer layer being formed of InzGa1-zAs, where z is larger than 0 and smaller than 1.
3 more elements
Dependencies are inferred from the claim text.