Imaging device

An imaging device comprising:

• a semiconductor substrate;
• and
• a first capacitive element, wherein:
• the first capacitive element includes a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode,
• at least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element,
• the first capacitive element includes a first trench portion and a second trench portion, each having a trench shape,
• the first electrical contact point is provided at the first trench portion, and
• the second electrical contact point is provided at the second trench portion.